2nd Conference on Green Engineering, Sustainable Materials, and Technologies for Circular Economy (GREEN CIRC '25)

Green Engineering on III-V Compound Semiconductors

Not scheduled

20m

Amphitheatre (Faculty of Technology and Metallurgy, Ss Cyril and Methodius University in Skopje)

Oral presentation

Speaker

Ms I-Chien Chen (Department of Electronic Engineering, I-Shou University, Kaohsiung 840, Taiwan)

Description

GaAs or GaN MOS-HEMT can indeed provide better performance than traditional Si-based MOSFET in suppressing leakage current and improving breakdown voltage, especially in high-frequency and high-power applications, which has significant advantages. These characteristics are very beneficial for IC power management, especially in terms of improving efficiency and reducing power consumption. In green energy applications, GaAs MOS-HEMTs can reduce energy losses and help achieve higher system efficiency and lower heat dissipation requirements, which are key factors to improve the efficiency of sustainable energy applications, e.g., applications in solar inverters, power control for electric vehicles and high-efficiency energy converters can reduce environmental burdens while operating at high efficiency. The study presents a discussion of oxide film on III-V semiconductor materials through the liquid phase oxidation. The equipment and process are simple and economic. Reducing the use of photomasks and etching solutions can meet the goals of green energy and environmental protection.