2nd Conference on Green Engineering, Sustainable Materials, and Technologies for Circular Economy (GREEN CIRC '25)

Simulation of III-V High-Speed Electronic Devices

Not scheduled

20m

Amphitheatre (Faculty of Technology and Metallurgy, Ss Cyril and Methodius University in Skopje)

Oral presentation

Speaker

Ms Wei-Chin Tseng (Department of Electronic Engineering, I-Shou University, Kaohsiung 840, Taiwan)

Description

III-V compound semiconductors, known for their high electron mobility and superior frequency response, can significantly contribute to green energy applications through advanced high-speed electronic devices. These materials, such as InP and GaN, enable the development of efficient power electronics, including inverters and converters, which are critical for renewable energy systems like solar and wind. Their high efficiency reduces energy losses during power conversion, improving the overall performance of green energy systems. Moreover, III-V semiconductors are instrumental in 5G and IoT applications, optimizing smart grid operations by enabling real-time data processing and communication. This ensures efficient energy distribution and management. In this work, the dc characteristics of InAlAs/InGaAs metamorphic high-electron-mobility transistor (MHEMT) are investigated by analytical methods. In equilibrium, the two-dimensional electron gas concentration (ns) and Fermi level are calculated by using two analytical equations. When the gate voltages are applied, ns are calculated by using the charge-control model. Then the I-V curves are calculated by using the drift-diffusion mechanism.